Electronic Structure of Metal-Semiconductor Contacts

1. Front Matter

   Pages I-XII

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2. Introduction

   • Winfried Mönch

   Pages 1-33

3. Ueber die Stromleilung dutch Schwefelmetalle

   • F. Von Braun

   Pages 37-44

4. Zum Mechanismus der Richtwirkung in Kupferoxydulgleichrichtern

   • W. Schottky, W. Deutschmann

   Pages 45-52

5. Halbleitertheorie der Sperrschicht

   • W. Schottky

   Pages 53-53

6. Note on The Contact Between a Metal and an Insular or Semi-Conductor

   • N. F. Mott

   Pages 54-58

7. Abweichungen vom Ohmschen Gesetz in Halbleitern

   • Von W. Schottky

   Pages 59-62

8. Surface States and Rectification at a Metal Semi-Conductor Contact

   • John Bardeen

   Pages 63-73

9. Surface States and Barrier Height of Metal-Semiconductor Systems

   • A. M. Cowley, S. M. Sze

   Pages 74-82

10. Theory of Surface States

    • Volker Heine

    Pages 83-90

11. Fundamental Transition in The Electronic Nature of Solids

    • S. Kurtin, T. C. McGill, C. A. Mead

    Pages 91-94

12. Density of states and barrier height of metal-Si contacts

    • F. Yndurain

    Pages 95-104

13. Metal-semiconductor Junctions for (110) Surfaces of Zinc-blende Compounds

    • E. Louis, F. Yndurain, F. Flores

    Pages 105-115

14. Electronic structure of a metal-semiconductor interface

    • Steven G. Louie, Marvin L. Cohen

    Pages 116-124

15. Ionicity and the theory of Schottky barriers

    • Steven G. Louie, James R. Chelikowsky, Marvin L. Cohen

    Pages 125-133

16. Chemical trends in metal-semiconductor barrier heights

    • M. Schlütcr

    Pages 134-137

17. Transition in Schottky Barrier Formation with Chemical Reactivity

    • L. J. Brillson

    Pages 138-141

18. New and unified model for Schottky barrier and III-V insulator interface states formation

    • W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, I. Lindau

    Pages 142-152

19. Schottky barriers: An effective work function model

    • J. L. Freeouf, J. M. Woodall

    Pages 154-156

20. The formation of the Schottky barrier at the V/Si interfacea)

    • J. G. Clabes, G. W. Rubloff, B. Reihl, R. J. Purtell, P. S. Ho, A. Zartner et al.

    Pages 157-160

Interface and surface science have been important in the development of semicon­ ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor­ insulator interfaces, heterojunctions between distinct semiconductors, and metal­ semiconductor contacts. The latter ones stood almost at the very beginning of semi­ conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

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• Halbleiter
• Kupfer
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• REM
• STEM
• development

• Universität Duisburg, Germany

  Winfried Mönch

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