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  • Conference proceedings
  • © 2008

Narrow Gap Semiconductors 2007

Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK

  • A state-of-the-art report on new advances in the field of narrow gap semiconductors

Part of the book series: Springer Proceedings in Physics (SPPHY, volume 119)

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Table of contents (49 papers)

  1. Front Matter

    Pages i-xvi
  2. Spin-Related Phenomena

    1. Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well

      • W. R. Branford, A. M. Gilbertson, P. D. Buckle, L. Buckle, T. Ashley, F. Magnus et al.
      Pages 3-5
    2. Photogalvanic Effects in HgTe Quantum Wells

      • B. Wittmann, S. N. Danilov, Z. D. Kwon, N. N. Mikhailov, S. A. Dvoretsky, R. Ravash et al.
      Pages 7-9
    3. Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers

      • P. Dziawa, W. Knoff, V. Domukhovski, J. Domagala, R. Jakiela, E. Lusakowska et al.
      Pages 11-14
    4. Control and Probe of Carrier and Spin Relaxations in InSb Based Structures

      • Giti A. Khodaparast, R. N. Kini, K. Nontapot, M. Frazier, E. C. Wade, J. J. Heremans et al.
      Pages 15-18
    5. Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells

      • K. L. Litvinenko, B. N. Murdin, S. K. Clowes, L. Nikzad, J. Allam, C. R. Pidgeon et al.
      Pages 19-21
    6. Temperature Dependence of the Electron Lande g-Factor in InSb

      • C. R. Pidgeon, K. L. Litvinenko, L. Nikzad, J. Allam, L. F. Cohen, T. Ashley et al.
      Pages 27-29
    7. Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix

      • Ya. V. Terent’ev, O. G. Lyublinskaya, A. A. Toropov, B. Ya. Meltser, A. N. Semenov, S. V. Ivanov
      Pages 31-33
    8. Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells

      • A. R. Dedigama, D. Jayathilaka, S. H. Gunawardana, S. Q. Murphy, M. Edirisooriya, N. Goel et al.
      Pages 35-38
  3. Growth, Fabrication, Characterisation and Theory

    1. Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulses

      • R. Adomavičius, R. Šustavičiūtė, A. Krotkus
      Pages 41-43
    2. Band Structure of InSbN and GaSbN

      • A. Lindsay, A. D. Andreev, E. P. O’Reilly, T. Ashley
      Pages 45-47
    3. Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications

      • S. D. Coomber, L. Buckle, P. H. Jefferson, D. Walker, T. D. Veal, C. F. McConville et al.
      Pages 49-51
    4. InMnAs Quantum Dots: A Raman Spectroscopy Analysis

      • A. D. Rodrigues, J. C. Galzerani, E. Marega Jr., L. N. Coelho, R. Magalhães-Paniago, G. J. Salamo
      Pages 57-60
    5. Conduction Band States in AlP/GaP Quantum Wells

      • M. Goiran, M. P. Semtsiv, S. Dressler, W. T. Masselink, J. Galibert, G. Fedorov et al.
      Pages 61-63
    6. Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy

      • M. Yin, A. Krier, R. Jones
      Pages 65-68
    7. Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE

      • M. Yin, A. Krier, P. J. Carrington, R. Jones, S. E. Krier
      Pages 69-72
    8. Epitaxial Growth and Characterization of PbGeEuTe Layers

      • V. Osinniy, P. Dziawa, V. Domukhovski, K. Dybko, W. Knoff, T. Radzynski et al.
      Pages 73-75
    9. Monte Carlo Simulation of Electron Transport in PbTe

      • V. Palankovski, M. Wagner, W. Heiss
      Pages 77-79

About this book

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics.

The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.

Editors and Affiliations

  • Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, UK

    Ben Murdin, Steve Clowes

Bibliographic Information

Buy it now

Buying options

eBook USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book USD 169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access