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  • © 2016

Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN

  • Provides a comprehensive overview of cutting-edge IR/UV detector technologies
  • Reviews the new technologies related to third-generation IR detectors
  • Describes key fabrication techniques such as material epitaxy, chip processing and readout circuits design of IR/UV detectors
  • Includes supplementary material: sn.pub/extras

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Table of contents (7 chapters)

  1. Front Matter

    Pages i-x
  2. Fundamentals of Focal Plane Arrays

    • Li He, Dingjiang Yang, Guoqiang Ni
    Pages 1-16
  3. Design Methods for HgCdTe Infrared Detectors

    • Li He, Dingjiang Yang, Guoqiang Ni
    Pages 17-120
  4. CdTe/Si Composite Substrate and HgCdTe Epitaxy

    • Li He, Dingjiang Yang, Guoqiang Ni
    Pages 121-263
  5. AlGaN Epitaxial Technology

    • Li He, Dingjiang Yang, Guoqiang Ni
    Pages 265-350
  6. HgCdTe Detector Chip Technology

    • Li He, Dingjiang Yang, Guoqiang Ni
    Pages 351-476
  7. Chip Technique of AlGaN Focal Plane Arrays

    • Li He, Dingjiang Yang, Guoqiang Ni
    Pages 477-593

About this book

This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.

Authors and Affiliations

  • Shanghai institute of technical physics, Chinese academy of sciences, Shanghai, China

    Li He

  • Tianjin Lishen Battery Joint-Stock Co. Ltd, Tianjin, China

    Dingjiang Yang

  • Opto-electronics School, Beijing Institute of Technology, Beijing, China

    Guoqiang Ni

About the authors

Li He received his B.S. degree from Nanjing University of Posts and Telecommunications in 1982, his M.S. in Electrical Engineering from the University of Electro and Communications (Japan) in 1985, and his Ph.D. in Electrical Engineering from Hokkaido University (Japan) in 1988. He was a Humboldt researcher at the Institute of Physics, Wuerzburg University (Germany) from 1990 to 1992 and subsequently worked at Purdue University, USA, from 1992 to 1994. Then he served as an associate professor at Hokkaido University, focusing on the interface electron quantum in 1994. Since 1994, he has been working at Shanghai Institute of Technical Physics, Chinese Academy of Sciences. He is currently a full professor at Shanghai Institute of Technical Physics, and the director of its Academic Committee. He is also the director of the Key Laboratory of Infrared Imaging Materials and Devices, Chinese Academy of Sciences. His research chiefly focuses on infrared electro-optical materials and devices.

Dingjiang Yang received his degree in Semiconductor Physics from the University of Jilin(China) in 1984. From 1984 to 2009, he was a faculty member at the North China Research Institute Of Electro-Optics (NCRIEO). After leaving the NCRIEO, he was the chairman of the China Optics and Optoelectronics Manufacturers Association (COEMA) from 2009 to 2015. Since December 2015 he has been the Chairman of Tianjin Lishen Battery Joint-Stock Co. Ltd. His research mainly focuses on InSb and HgCdTe detectors.

Guoqiang Ni is a professor at Beijing Institute of Technology (BIT), Beijing, China. He graduated from Fudan Univ., Shanghai, China and received his bachelor’s degree in Nuclear Physics in 1967. Later, he completed his Master’s and Ph.D. in Optical Engineering at BIT, in 1983 and 1989. Since January 1983 he has been a faculty member of BIT’s Opto-electronics School. His research focuses on Optical Engineering, Photo-electronics Devices/Technologies/Systems, Image Processing, etc.

Bibliographic Information

  • Book Title: Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN

  • Authors: Li He, Dingjiang Yang, Guoqiang Ni

  • DOI: https://doi.org/10.1007/978-3-662-52718-4

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)

  • Copyright Information: National Defense Industry Press, Beijing and Springer-Verlag Berlin Heidelberg 2016

  • Hardcover ISBN: 978-3-662-52716-0Published: 29 July 2016

  • Softcover ISBN: 978-3-662-57072-2Published: 30 May 2018

  • eBook ISBN: 978-3-662-52718-4Published: 15 July 2016

  • Edition Number: 1

  • Number of Pages: X, 690

  • Number of Illustrations: 321 b/w illustrations, 299 illustrations in colour

  • Additional Information: Jointly published with National Defence Industry Press, China

  • Topics: Optics, Lasers, Photonics, Optical Devices, Optical and Electronic Materials, Microwaves, RF and Optical Engineering, Semiconductors

Buy it now

Buying options

eBook USD 169.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access